PROCESS FORMING TOPOLOGY OF INTEGRATED MICROCIRCUITS Russian patent published in 1997 - IPC

Abstract RU 2099810 C1

FIELD: microelectronics, formation of functional layers of microcircuits including hybrid, interacted on entire plate, etc. SUBSTANCE: seed layer is formed on surface of material in agreement with process under action of laser radiation in active gas atmosphere. Then functional layer is formed under action of ultraviolet radiation in another gas atmosphere. Process is based on formation of centers of chemosorption under action of laser beam which are formed thanks to disintegration of volatile composition of metal with low activation energy and their usage in the capacity of seed layer to conduct catalytic reactions under action of activating ultraviolet radiation. EFFECT: increased productivity and efficiency of process. 2 cl

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RU 2 099 810 C1

Authors

Krivoruchko V.A.

Petrov N.A.

Fedorenko V.V.

Dates

1997-12-20Published

1996-07-10Filed