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2 098 886

(13)

C1

(51)

IPC

(21) (22)

Application

96114208/25, 1996-07-10

(22)

Actual filing date

1996-07-10

(45)

Published

1997-12-10

(72)

Inventor

Petrov N.A.

(73)

Holder

Aktsionernoe Obshchestvo Zakrytogo Tipa Dlja Vas."

METHOD FOR DEVELOPMENT OF CRYSTALS FROM AMORPHOUS PHASE ON NON-CRYSTAL SUBSTRATE Russian patent published in 1997 - IPC

Abstract RU 2098886 C1

FIELD: manufacturing of semiconductor crystals. SUBSTANCE: method involves laser-stimulated deposition of amorphous material from gas, generation of interference pattern using two laser beams in this layer, exposition of this film to laser beam which power provides possibility for its melding and starting crystallization process after this. Interference pattern (as standing wave) is used as seed for crystallization. EFFECT: increased functional capabilities. 2 cl

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RU 2 098 886 C1

Authors

Petrov N.A.

Dates

1997-12-10—Published

1996-07-10—Filed

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