METHOD FOR MANUFACTURING HYBRID HIGHLY INTEGRATED CIRCUIT Russian patent published in 1996 - IPC

Abstract RU 2065641 C1

FIELD: microelectronic equipment. SUBSTANCE: stepped-surface hollows are made in aluminium nitride substrate. Wiring contacts are formed by laser beam within substrate and conducting tracks, on its surfaces; wiring contacts are made by simultaneous exposure of substrate both sides to laser beam for 0.5-1 s. EFFECT: facilitated procedure. 4 dwg

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RU 2 065 641 C1

Authors

Danilov A.V.

Danilova N.F.

Dates

1996-08-20—Published

1993-06-01—Filed