FIELD: semiconductor technology. SUBSTANCE: device has body 1, tanks for initial 3 and spent 2 solutions-melts, pistons 7, cells for substrates 13, displacement facilities 17, 19, system of channels and holes for forced delivery to and removal of solutions-melts from substrate surface, and dosing tank 10. Device is also provided with stack of plane-parallel plates 4, 5, 6, 9 positioned horizontally in body and capable of reciprocal motion relative to one another. Tanks for initial solutions-melts are arranged between plates, and cells for substrate and system of channels and holes are located in plates. Piston displacement facility is provided with spring 18. EFFECT: more effective epitaxial process. 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| DEVICE FOR LIQUID PHASE EPITAXY OF MULTILAYER SEMICONDUCTOR STRUCTURES | 2013 |
|
RU2515316C1 |
| HETEROSTRUCTURE BASED ON INDIUM ARSENIDE-ANTIMONIDE-BISMUTHIDE AND PROCESS OF ITS MANUFACTURE | 1992 |
|
RU2035799C1 |
| PHARMACOLOGICAL AGENT "PHOTOHEME" FOR PHOTODYNAMIC CANCER THERAPY | 1996 |
|
RU2128993C1 |
| METHOD OF PRODUCING COMPOSITE POLYMER MEMBRANE FOR SEPARATION OF CARBON DIOXIDE FROM GAS MIXTURES | 1998 |
|
RU2146169C1 |
| METHOD OF BACTERIOCHLOROPHYLL A PREPARING | 1996 |
|
RU2144085C1 |
| POLYMER COMPOSITION | 1995 |
|
RU2098353C1 |
| METHOD OF PRODUCING SOLID DETERGENTS | 1993 |
|
RU2076144C1 |
| KINETIC METHOD FOR DETECTING RHODIUM | 1994 |
|
RU2102744C1 |
| DEVICE FOR SHEAR TEST OF ASPHALT CONCRETE | 1994 |
|
RU2086950C1 |
| METHOD OF PRODUCING SEMICONDUCTOR STRUCTURES BY LIQUID PHASE EPITAXY WITH HIGH UNIFORMITY ON THICKNESS OF EPITAXIAL LAYERS | 2016 |
|
RU2638575C1 |
