HETEROSTRUCTURE BASED ON INDIUM ARSENIDE-ANTIMONIDE-BISMUTHIDE AND PROCESS OF ITS MANUFACTURE Russian patent published in 1995 - IPC

FIELD: production of semiconductor materials. SUBSTANCE: heterostructure based on indium arsenide-antimonide-bismuthide includes epitaxial layer carrying indium, arsenic, antimony and bismuth with following propotion of components, atomic per cent: indium 50; antimony 44-46; bismuth 0.3-0.5 and arsenic being the balance, and indium antimonide substrate. Novelty of heterostructure lies in presence of second epitaxial layer containing same components under following proportion of them, atomic per cent: indium 50, antimony 41-43; bismuth 0.3-0.5 and arsenic being the balance. Process is carried out by disolution of weights of indium arsenide and antimonide in metal solvent - bismuth at saturation temperature. Then homogenization of solution-melt at temperature 480 C and cooling of system with constant rate are conducted. Solution-melt is brought to contact with substrate at temperature 12-20 C below saturation temperature, it is removed from surface of exitaxial layer after growing of layer of specified thickness is completed. Further on second epitaxial layer is grown is one technological cycle with same sequence of operations. Solution-melt is brought to contact with surface of first epitaxial layer at temperature 7-18 C below saturation temperature. EFFECT: facilitated manufacture, enhanced quality of heterostructure. 2 cl, 3 tbl