FIELD: chemistry.
SUBSTANCE: when implementing the method, a sealed growth chamber with a solution-melt is used, in which a group of substrates are fixed in pairs. In this case, a stationary growth chamber is used with a variable width of the growth channel in height with a certain deviation angle from the vertical ϕ.
EFFECT: compensation of undesirable mass transfer of the primary crystal-forming component - arsenic in the vertical direction, which leads to the increased uniformity of the thickness of the epitaxial layers on the structure area and, accordingly, the main technical or electrical characteristics of the resulting epitaxial structures.
2 cl, 2 dwg, 2 ex, 2 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING MULTILAYER HETEROEPITAXIAL STRUCTURES IN AlGaAs SYSTEM BY LIQUID-PHASE EPITAXY METHOD | 2016 |
|
RU2639263C1 |
| METHOD OF PRODUCING LOW-ALLOY LAYER OF GAAS BY LIQUID-PHASE EPITAXY | 2020 |
|
RU2727124C1 |
| METHOD FOR OBTAINING A MULTI-LAYER HETEROEPITAXIAL P-I-N STRUCTURE IN THE AlGaAs SYSTEM BY THE LIQUID PHASE EPITAXY METHOD | 2017 |
|
RU2647209C1 |
| METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY | 2016 |
|
RU2668661C2 |
| DEVICE FOR LIQUID PHASE EPITAXY OF MULTILAYER SEMICONDUCTOR STRUCTURES | 2013 |
|
RU2515316C1 |
| METHOD FOR MANUFACTURING THE SEMICONDUCTOR P-I-N STRUCTURE BASED ON GAAS-AlGAAS COMPOUNDS BY LIQUID-PHASE EPITAXY | 2020 |
|
RU2744350C1 |
| METHOD FOR OBTAINING P-I-N STRUCTURE BASED ON GAAS-GAALAS COMPOUNDS BY LIQUID-PHASE EPITAXY | 2020 |
|
RU2749501C1 |
| METHOD OF SIMULTANEOUS PRODUCTION OF P-I-N STRUCTURE OF GAAS WITH P, I AND N AREA IN ONE EPITAXIAL LAYER | 2015 |
|
RU2610388C2 |
| METHOD OF LIQUID-PHASE EPITAXY BY EVAPORATING SOLVENT PROCESS | 0 |
|
SU1581786A1 |
| METHOD FOR MANUFACTURING SUPERCONDUCTOR HETEROSTRUCTURE AROUND AB COMPOUNDS BY WAY OF LIQUID-PHASE EPITAXY | 2005 |
|
RU2297690C1 |
