GASEOUS-DISCHARGE CHAMBER Russian patent published in 1998 - IPC

Abstract RU 2105439 C1

FIELD: technology of cleaning and rendering harmless waste gases and effluents, plasma-chemical synthesis of chemical compounds with employment of gaseous-discharge chambers. SUBSTANCE: gaseous-discharge chamber has pin cathodes and flat anode of current conductive material with holes on surface made in the form of spherical hollows contacting one another and having rounded chamfer on boundary with surface. Hollows are arranged uniaxially to cathode in staggered order with ratio of depth of hollow to its diameter equal to ( 0.1-0.3 ): 1. Usage of proposed chamber makes it possible to render harmless industrial gas effluent with cleaning degree up to 96% without preliminary preparation. EFFECT: improved cleaning efficiency of chamber. 2 dwg

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RU 2 105 439 C1

Authors

Akishev Jurij Semenovich

Epkhieva Tat'Jana Semenovna

Klushin Vitalij Nikolaevich

Napartovich Anatolij Petrovich

Trushkin Nikolaj Ivanovich

Dates

1998-02-20Published

1996-09-25Filed