SYMMETRICAL THYRISTOR Russian patent published in 1998 - IPC

FIELD: microelectronics. SUBSTANCE: proposed symmetrical thyristor is integrated device composed of two thyristors connected in parallel opposition and having common controlling electrode. It includes center base n layer, first p layer which is superimposed on center base n layer and has emitter, controlling and separating sections coming out to first main surface, second p layer which borders on center base n layer from beneath and has emitter section coming out to second main surface, first emitter n layer, first additional n layer and auxiliary n layer that form p-n junctions with first p layer and come out to first main surface, second emitter n layer and second additional n layer which is its continuation that form p-n junction with second p layer and come out to second main surface. EFFECT: decreased unblanking control currents of symmetrical thyristor while it is switched on and provision for approximate equality of values of these control currents. 5 cl, 12 dwg