REVERSE-CONDUCTING POWER THYRISTOR Russian patent published in 1997 - IPC

FIELD: microelectronics. SUBSTANCE: reverse-conducting integrated power thyristor has main thyristor and diode regions forming two adjacent regions of semiconductor structure of device with insulating region between these adjacent regions, auxiliary thyristor region located between main thyristor region and central gate electrode; all regions are metallized except for p-layer surface of insulating region; insulating region, as projected to plane parallel to planed of p-n junctions, is made in the form of two similar radially directed sections; auxiliary thyristor region has gap between sections of anodic metallization boundaries of diode region and central gate electrode placed against each other. EFFECT: improved design. 6 dwg