TRIAC Russian patent published in 1996 - IPC

FIELD: semiconductor devices. SUBSTANCE: section of lower n-emitter layer under control region of same size as the n-control region is limited and mentioned n-emitter layer and n-control region are shorted out. Triac is controllable at all four quadrants by current of same order of magnitude and provides for improvement of switching characteristics of device due to removal (limitation) of n-emitter layer section under p-control region. EFFECT: provision for controlling switching voltage in any direction by current of same order of magnitude; improved transient characteristics and working temperature. 5 cl, 2 dwg