POWER CUT-OFF THYRISTOR Russian patent published in 1994 - IPC

FIELD: electronics. SUBSTANCE: power cut-off thyristor has semiconductor structure with multitude of radial strip emitters 1 grouped into several concentric sections 1,1-1,1-2. Within the limits of these section emitters have identical dimensions and are placed at equal angle with respect to each other. Emitters are provided with metallization 2. Base area 3 embraces emitters, is provided with metallization 4 and contacts controlling electrode 5. Width of nonmetallized parts of base area within the limits of each concentric section is same but it grows from one concentric section to another one in direction towards controlling electrode. This growth is defined by expression specified in description of invention. Invention makes it possible to obtain levelling of base currents for all emitters independent of their distance from controlling electrode which ensures identical delay times with switching on and off of thyristor. EFFECT: increased resistance to high speeds of growth of anode current with switching on and increased permissible value of cut-off current. 1 tbl, 3 dwg