FIELD: microelectronics.
SUBSTANCE: proposed bipolar CMOS device has first MOS transistor incorporating source and drain regions, electrodes for source and drain regions of first and second polycrystalline silicon layers, and gate of third polycrystalline silicon layer; second MOS transistor of same structure as first one, polarity of conductivity of its regions being reverse to that of first MOS transistor; first bipolar transistor has emitter electrode of third polycrystalline silicon layer above emitter region, base electrode for passive base region of first and second polycrystalline silicon layers, and collector electrode for collector region of third polycrystalline silicon layer; second bipolar transistor has same structure as first one and its regions have polarity of conductivity reverse to that of first bipolar transistor. Such improved design of proposed bipolar MOS device makes it possible to use complex self-alignment of device regions and improved manufacturing technology. Device manufacturing process is also given in invention specification.
EFFECT: enhanced degree of integration, speed, and yield.
2 cl, 12 dwg
Title | Year | Author | Number |
---|---|---|---|
BICMOS DEVICE AND PROCESS OF ITS MANUFACTURE | 1996 |
|
RU2106719C1 |
METHOD FOR PRODUCING CONGRUENT BIPOLAR CMOS DEVICE | 2005 |
|
RU2295800C1 |
PROCESS OF MANUFACTURE OF BICOS/BIMOS DEVICE | 1998 |
|
RU2141148C1 |
METHOD OF CMOS TRANSISTORS MANUFACTURING WITH RAISED ELECTRODES | 2006 |
|
RU2329566C1 |
PROCESS OF MANUFACTURE OF BIPOLAR COS/MOS STRUCTURE | 1998 |
|
RU2141149C1 |
METHOD OF MANUFACTURING SELF-COMBINED BICMOS STRUCTURE OF SUBMICROMETER SIZES | 2006 |
|
RU2329567C1 |
NON-EPITAXIAL STRUCTURE OF BIPOLAR TRANSISTOR | 2008 |
|
RU2368036C1 |
METHOD FOR MANUFACTURE OF BIPOLAR TRANSISTOR AS A COMPOSITION OF BIPOLAR COMPLEMENTARY STRUCTURE "METAL-OXIDE-SEMICONDUCTOR" | 2001 |
|
RU2208265C2 |
METHOD FOR MANUFACTURING SELF-SCALED BIPOLAR CMOS STRUCTURE | 2003 |
|
RU2234165C1 |
BIPOLAR CMOS STRUCTURE MANUFACTURING PROCESS | 1995 |
|
RU2106039C1 |
Authors
Dates
2006-08-20—Published
2003-11-13—Filed