BIPOLAR CMOS DEVICE AND ITS MANUFACTURING PROCESS Russian patent published in 2006 - IPC H01L27/06 

FIELD: microelectronics.

SUBSTANCE: proposed bipolar CMOS device has first MOS transistor incorporating source and drain regions, electrodes for source and drain regions of first and second polycrystalline silicon layers, and gate of third polycrystalline silicon layer; second MOS transistor of same structure as first one, polarity of conductivity of its regions being reverse to that of first MOS transistor; first bipolar transistor has emitter electrode of third polycrystalline silicon layer above emitter region, base electrode for passive base region of first and second polycrystalline silicon layers, and collector electrode for collector region of third polycrystalline silicon layer; second bipolar transistor has same structure as first one and its regions have polarity of conductivity reverse to that of first bipolar transistor. Such improved design of proposed bipolar MOS device makes it possible to use complex self-alignment of device regions and improved manufacturing technology. Device manufacturing process is also given in invention specification.

EFFECT: enhanced degree of integration, speed, and yield.

2 cl, 12 dwg