LATERAL BIPOLAR TRANSISTOR BASED ON “SILICON ON INSULATOR” STRUCTURES AND THE METHOD FOR ITS MANUFACTURE Russian patent published in 2022 - IPC H01L21/265 H01L29/73 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics and can be used in the creation of radiation-resistant microchips of the radio frequency wavelength range. The method for manufacturing a lateral bipolar transistor on “silicon-on-insulator” structures according to the invention includes the formation of emitter, base and collector regions located in the epitaxial silicon layer, bounded at the edges by lateral dielectric insulation and silicon dioxide, with electrical wiring on metal with a titanium silicide sublayer and a passivating dielectric layer, while doping the active base region of the n-p-n bipolar transistor is performed by double implantation of boron and BF₂⁺ ions, doping the n⁺ collector with double implantation of phosphorus ions, the regions of the n⁺ emitter and collector by double implantation of phosphorus ions with a higher dose of doping, doping of the passive base region by implantation of boron ions, through buffer layers of silicon dioxide, followed by rapid thermal annealing of radiation defects, in the mode of implantation of boron ions, BF₂⁺ and phosphorus, is chosen based on the requirement of obtaining, after thermal activation of the impurity, distribution close to uniform of the impurity over the entire depth of the epitaxial layer to the interface with the “buried” dielectric in the emitter, base and collector regions, at the same time, p-n-p lateral bipolar transistors are manufactured using a similar technology with a change in the type of impurity for the emitter, base and collector regions.

EFFECT: invention provides an increase in the base current transfer coefficient and the achievement of maximum levels of resistance to ionizing radiation of a bipolar transistor.

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