PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICE Russian patent published in 1995 - IPC

Abstract RU 2037910 C1

FIELD: electronics. SUBSTANCE: assembly pad is lowered in cut workstock of metal output frame up to formation of gap between face surface of assembly pad and rear side of cross-pieces. Dielectric plate in inserted into gap. EFFECT: facilitated manufacture. 2 dwg

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RU 2 037 910 C1

Authors

Kolychev A.I.

Makarenko V.G.

Petukhova V.P.

Dates

1995-06-19—Published

1990-11-02—Filed