METHOD TO MANUFACTURE BODY OF HIGH-CAPACITY SEMICONDUCTOR MICROWAVE INSTRUMENT Russian patent published in 2013 - IPC H01L23/02 

FIELD: electricity.

SUBSTANCE: method to manufacture a body of a high-capacity semiconductor microwave instrument includes manufacturing of a highly thermally-conductive base and a frame of metal or metal alloy, manufacturing of outputs, matching of the frame with outputs and the highly thermally conductive base, their tight connection by high-temperature soldering, subsequent location of at least one crystal of an active element and at least one matching integrated circuit in the body, as well as at least one semiconductor instrument, and their connection with low-temperature soldering. The highly thermally conductive base is made at least with one ledge on their face side, additionally a compensator element is made from metal or metal alloy with the specified temperature coefficient of linear expansion. As the frame with outputs and the highly thermally conductive base are matched, the high-temperature solder is arranged only between the highly thermally conductive base and with the frame with outputs, and the specified tight connection is carried out simultaneously with connection of the compensator element with the highly thermally-conductive base at 650-1100°C.

EFFECT: improved heat removal and reduced microwave losses in a body and accordingly increased output capacity of a semiconductor microwave instrument, higher reliability, yield and manufacturability.

8 cl, 2 dwg