LEAD-FREE METHOD OF CONTACT-REACTION SOLDERING SEMICONDUCTOR CHIP TO HOUSING WITH FORMATION OF Al-Zn EUTECTIC Russian patent published in 2009 - IPC H01L21/52 

Abstract RU 2375786 C1

FIELD: physics; conductors.

SUBSTANCE: invention relates to making semiconductor devices and can be used in assembling semiconductor chips in a housing for semiconductor devices through lead-free soldering. The method of lead-free contact-reaction soldering a semiconductor chip to a housing with formation of an Al-Zn eutectic involves depositing aluminium or tin on the soldered surfaces of the chip and housing respectively and placing a zinc foil between the chip and the housing and soldering to the base of the housing. Aluminium metal coating is deposited on the base of the housing. A solder foil containing 20Zn/80Sn (wt %) is placed between the chip and the housing, and soldering is carried out in a shielding medium at temperature between 420 and 430°C.

EFFECT: reduced labour input during manufacturing and increased maximum permissible temperature of semiconductor devices during their operation.

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RU 2 375 786 C1

Authors

Zenin Viktor Vasil'Evich

Kochergin Aleksandr Valer'Evich

Fomenko Jurij Leonidovich

Khishko Ol'Ga Vladimirovna

Dates

2009-12-10Published

2008-04-29Filed