FIELD: electronic engineering. SUBSTANCE: device operates with at least two antiseries semiconductor regions. Each semiconductor region has electron source, electron collector, and electron-flow control electrode possessing field-effect transistor characteristics. Semiconductor region has also inner three-dimensional diodes. Gate-source forward voltage set across first semiconductor region is so high that drain-source current is limited to desired value. Gate-source reverse voltage set across second semiconductor region is of such value that three-dimensional diode remains de-energized. EFFECT: reduced power loss. 4 cl, 3 dwg
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Authors
Dates
1998-10-10—Published
1993-09-08—Filed