AC CURRENT SETTING DEVICE Russian patent published in 1998 - IPC

Abstract RU 2120169 C1

FIELD: electronic engineering. SUBSTANCE: device operates with at least two antiseries semiconductor regions. Each semiconductor region has electron source, electron collector, and electron-flow control electrode possessing field-effect transistor characteristics. Semiconductor region has also inner three-dimensional diodes. Gate-source forward voltage set across first semiconductor region is so high that drain-source current is limited to desired value. Gate-source reverse voltage set across second semiconductor region is of such value that three-dimensional diode remains de-energized. EFFECT: reduced power loss. 4 cl, 3 dwg

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RU 2 120 169 C1

Authors

Rajnkhard Majer

Khermann Tsirkhut

Khajnts Mitlener

Dates

1998-10-10Published

1993-09-08Filed