CURRENT LIMITER Russian patent published in 1999 - IPC

FIELD: limiting super-high currents by means of semiconductor. SUBSTANCE: current limiter has at least one controlled semiconductor with electron source (source), electron collector (drain), and gate electrode controlling electron flow (gate) possessing field-effect transistor characteristics. For ac voltage, two field-effect transistors are connected in series opposition. Means are provided for internal generation of control voltage from at least part of load current and/or at least part of voltage drop across semiconductor component required to control the latter. EFFECT: improved current-limiting effect. 16 cl, 16 dwg