HIGH-VOLTAGE SWITCHING SEMICONDUCTOR DEVICE Russian patent published in 2025 - IPC H10D30/66 

FIELD: semiconductor equipment.

SUBSTANCE: invention relates to semiconductor engineering and can be used in power electronics devices. High-voltage field-effect switching transistor with a control p-n-junction is formed on a low-resistance semiconductor substrate with a high-resistance layer of the first conductivity type, transistor gate is formed from heavily doped regions of the second conductivity type in the form of cells in the high-resistance layer of the first conductivity type, areas of sources are made in the form of heavily doped areas of the first conductivity type and are located in windows of gate cells and metallization of sources and gate with contact pads, wherein the region of the second conductivity type, which is under the metallization of the source, gate and on the periphery, is separated from the gate region by a high-resistance drain region of the first conductivity type, the distance between which must be not more than a distance, at which premature surface breakdown of control p-n-junction occurs, and not less than distance, at which the space charge regions occurring around the heavily doped regions of the second conductivity type are closed when voltage is not more than the maximum allowable cutoff voltage.

EFFECT: creation of a crystal structure of a high-voltage power transistor made on one crystal with a high-speed anti-parallel diode.

1 cl, 3 dwg