FIELD: metal forming. SUBSTANCE: method involving applying material onto underlying surface by vacuum spraying through evaporation mask is distinguished by that underlying surface and evaporator are positioned with respect to each other according to relationship d=c/2alo where lo is distance between mask to evaporator, c is width of evaporator in direction perpendicular to mask strips, and c is width of alternating mask cuts and impenetrable strips between them. Method enables manufacturing profile of surface with minimum deviation from cosine one, which facilitates theoretical description of instability development processes simulated in experimental investigations in the controlled thermonuclear synthesis involving powerful lasers. EFFECT: improved accuracy of profiled surface. 3 cl, 9 dwg
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Authors
Dates
1998-10-20—Published
1997-09-10—Filed