METHOD OF PRODUCING MIXTURE FOR GROWING OF SINGLE CRYSTALS OF LANTHANUM-GALLIUM SILICATE Russian patent published in 1999 - IPC

Abstract RU 2126063 C1

FIELD: chemical technology of composite materials based on oxides for growing of single crystals, in particular, of lanthanum-gallium silicate. SUBSTANCE: for producing single crystals of lanthanum-gallium silicate of stoichiometric composition added to mixture of oxides of lanthanum, gallium and silicon is metallic gallium in the preset range of concentration. Then mixture is heated in oxygen-containing medium locally and short and of short duration up to starting of reaction of self-propagating high-temperature synthesis in conditions of combustion. EFFECT: higher efficiency. 3 cl, 1 tbl

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RU 2 126 063 C1

Authors

Koznov G.G.(Ru)

Dates

1999-02-10Published

1996-09-23Filed