FIELD: methods of growing single crystals of gallium-containing oxide compounds, in particular, lanthanum-gallium silicate piezoelectric effect; may be used in manufacture of devices operating on bulk and surface acoustic waves. SUBSTANCE: essence of the method consists in selection of orientation of inoculating crystal ensuring growing by Czochralsky method of single crystals of lanthanum-gallium silicate along direction <01.1>. Such orientation allows cutting out of plates at an angle of 90 deg to growth axis to ensure minimal losses of material and temperature coefficient of frequency close to zero. EFFECT: higher efficiency.
