METHOD FOR GROWING SINGLE CRYSTALS OF LANTHANUM-GALLIUM SILICATE Russian patent published in 1998 - IPC

FIELD: methods for growing single crystals of gallium-containing oxide compounds, in particular, lanthanum-gallium silicate possessing piezoelectric effect and used for manufacture of devices on volume and surface acoustic waves. SUBSTANCE: method is based on the Czochralsky method and includes loading into melting pot of mixture produced by self-propagating high-temperature synthesis and corresponding to composition La₃Ga₅SiO₁₄. Before melting of the mixture with high-frequency current, protective atmosphere is formed from mixture of argon or nitrogen with addition of 2-15 vol. % of air at pressure of 1.1-1.8 atm. Molten mixture is held for 2-15 h, then pressure of protective atmosphere is reduced to value within 1.00-1.09 atm. Further on, oriented seed crystal is brought into contact with melt surface and oriented crystal is pulled from melt. After crystal pulling, it is subjected to high-temperature annealing. EFFECT: higher efficiency. 2 cl