PROCESS AND FACILITY TO MANUFACTURE PHOTOGALVANIC DEVICES AND PHOTOGALVANIC DEVICE Russian patent published in 1999 - IPC

FIELD: conversion of light to electricity. SUBSTANCE: invention deals with process and facility to manufacture photogalvanic device of large area capable of generation of inexpensive electric energy. Facility for realization of process has box with controlled medium where furnace is positioned. One as minimum but preferably several positions ensure capability of production of heated vapors of semiconductor material in furnace for uninterrupted precipitation of semiconductor material at increased temperature on sheet substrate that is sheet of glass moved in furnace. Sheet substrate is transported in furnace over roller conveyer. Semiconductor material which basic layer is cadmium telluride is deposited on to surface of substrate facing upwards at each position from point located in furnace above roller conveyer. After deposition of semiconductor material on substrate it is quickly cooled at cooling position to harden sheet of glass of substrate. Photogalvanic device has sheet glass substrate with surface area of 1000 sq.cm as minimum. One of its surfaces is used for deposition of cadmium telluride in layer of 1-5 μm with crystals of 0.5-5.0 μm. EFFECT: improved process of facility to manufacture photogalvanic devices generating inexpensive electric energy. 32 cl, 10 dwg