CHEMICAL DEPOSITION FROM VAPOUR PHASE AT ATMOSPHERIC PRESSURE Russian patent published in 2011 - IPC C03C17/22 C23C14/06 

Abstract RU 2421418 C2

FIELD: chemistry.

SUBSTANCE: invention relates to a method of producing coating semiconductor materials via chemical deposition from vapour phase. The method of depositing a coating onto a glass substrate heated to 585-650°C at atmospheric pressure comprises the following operations: mixing the controlled mass of semiconductor material and a stream of hot inert gas; evaporating the semiconductor material in the stream of hot inert gas in order to obtain a fluid mixture at 800-1100°C; directing the fluid mixture at virtually atmospheric pressure onto a substrate, having a transparent, electroconducting coating; depositing a layer of the semiconductor material onto the surface of the substrate. The semiconductor material used is cadmium sulphide or cadmium telluride.

EFFECT: low cost of making photovoltaic panels.

14 cl, 3 dwg

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RU 2 421 418 C2

Authors

Dzhonston Norman V.

Dates

2011-06-20Published

2005-08-02Filed