PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURE OF SUCH DEVICE Russian patent published in 2015 - IPC H01L31/42 H01L31/18 

Abstract RU 2559991 C1

FIELD: electricity.

SUBSTANCE: photovoltaic device according to the invention includes a combination of semiconductor structures and a protective layer. The combination of semiconductor structures has a set of sides and includes p-n-transition, n-p-junction, p-i-n-junction, n-i-p-junction, tandem junction or multi-junction. In particular, the protective layer is created for coating of sides of the combination of semiconductor structures.

EFFECT: according to the invention the protective layer can effectively suppress effect of degradation of photovoltaic device caused by high potential that improves reliability of the photovoltaic device.

14 cl, 13 dwg, 1 tbl

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RU 2 559 991 C1

Authors

Tdzhakhdzhono Budi

Jan Min-Tszjun

Tin Chuan'-Vehn'

Chiu Juj-Tin

Tan' Tszen-Tin

U Vehn'-Shehn

Shehn' Ko-Vehj

Khu Fan-Vehj

Dates

2015-08-20Published

2014-03-03Filed