FIELD: electricity.
SUBSTANCE: photovoltaic device according to the invention includes a combination of semiconductor structures and a protective layer. The combination of semiconductor structures has a set of sides and includes p-n-transition, n-p-junction, p-i-n-junction, n-i-p-junction, tandem junction or multi-junction. In particular, the protective layer is created for coating of sides of the combination of semiconductor structures.
EFFECT: according to the invention the protective layer can effectively suppress effect of degradation of photovoltaic device caused by high potential that improves reliability of the photovoltaic device.
14 cl, 13 dwg, 1 tbl
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Authors
Dates
2015-08-20—Published
2014-03-03—Filed