METHOD OF SINGLE CRYSTAL GROWING (VERSIONS) Russian patent published in 1999 - IPC

Abstract RU 2133787 C1

FIELD: growing of commercial synthetic single crystals for manufacture of jewelry and high-strength optical articles (small windows, lenses, pyramids, etc). SUBSTANCE: mixture 8 contains zirconium dioxide and oxide of stabilizing metal. Placed on tubes 2 is layer of heat-insulating fill, mixture 8 and single crystal wastes 9. Smelting of mixture 8 and wastes 9 initiated by metal 10 is carried out with the help of function coil 4 and high-frequency generator 5 with simultaneous cooling of container with water. Container is moved with respect to coil 4 at speed of 0.5-1.5 mm/h with no use of reverse rotation of container and seed single crystals. EFFECT: increased sizes of single crystals and improved their optical homogeneity. 9 cl, 2 dwg

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RU 2 133 787 C1

Authors

Aleksandrov V.I.

Borik M.A.

Vishnjakova M.A.

Vojtsitskij V.P.

Kalabukhova V.F.

Lomonova E.E.

Osiko V.V.

Dates

1999-07-27Published

1999-07-25Filed