SINGLE STAGE ALL-PURPOSE DENTAL IMPLANT Russian patent published in 2006 - IPC A61C8/00 

Abstract RU 2284790 C1

FIELD: medical engineering.

SUBSTANCE: device has intraoral, sub- and intraosseous parts made as a whole with each other. The intraosseous part has hemispheric apex portion. The implant is manufactured from partially stabilized zirconium dioxide crystal of nanostructure having <100> axis coinciding with the implant axis. Intraosseous part surface is wave-shaped and its vertical plane profile in the direction from subosseous part towards the apical end is convex circular arcs relative to the implant axis with reducing radii of R11> R12> R13> R14>, tangent to the circles makes an angle of ∞1 = 8-10°. Transition from one convex arc to another is smoothed with a circular arc arranged concave relative to the implant axis, arc radius being equal to R21≈1.1R11, R22≈1.1R12, R23≈1.1R13, R24≈1.1R14. The vertical plane profile of the subosseous implant part is an arc arranged concave relative to the implant axis having radius of R3≈1.5-1.6R11, ¼ of subosseous implant part belonging to the intraoral part is manufactured as truncated cone turned towards the implant axis to which the cone generatrix makes an angle of ∞2 = 18-20°.

EFFECT: high strength; high fixation stability; improved serviceability.

1 dwg

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RU 2 284 790 C1

Authors

Borik Mikhail Aleksandrovich

Vishnjakova Marija Anatol'Evna

Vojtsitskij Vladimir Petrovich

Lomonova Elena Evgen'Evna

Osiko Vjacheslav Vasil'Evich

Chilikin Lev Vladimirovich

Dates

2006-10-10Published

2005-01-31Filed