HIGH-VOLTAGE TURN-ON MOS DEVICE BUILT AROUND SEMICONDUCTOR INTEGRATED CIRCUIT Russian patent published in 1999 - IPC

Abstract RU 2137294 C1

FIELD: semiconductor devices. SUBSTANCE: two design versions of devices built around transistors of same polarity of conductivity as substrate and used for turning on high voltage (- Vpp) such as programming voltage across word line of flash storage are described. EFFECT: provision for dispensing with deep insulating baths requiring special technology. 6 cl, 3 dwg

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RU 2 137 294 C1

Authors

Armin Khanneberg

Georg Tempel'

Dates

1999-09-10—Published

1995-12-29—Filed