DEVICE FOR BUILDING UP HIGH PRESSURE AND CREATING HIGH TEMPERATURE Russian patent published in 1999 - IPC

FIELD: manufacture of synthetic superhard materials, viz.: diamond, cubical boron nitride and composite materials on their bases. SUBSTANCE: device has two matrices mounted coaxially and directed towards each other by recesses with spherical dimples which are engageable with taper surfaces forming high-pressure chamber inside which container is placed. Matrices have taper or flat surface towards periphery from recesses where circular projections are located. Dimples have various heights H₁ and H₂, taper surfaces have different taper angles α₁ and α₂; taper surfaces made at different angles β₁ and β₂ run to periphery of matrices forming punch-matrix at different diameters of dimples d_d1 and d_d2. Circular projections have lesser heights as compared with central circular taper projections by no more than 12% of depth of dimples H₁ and H₂; projections are made at relationship of , where d_pr is diameter of circular projection and d_d1 is diameter of dimple of punch-matrix. EFFECT: increased pressure in chamber at lesser force of press; improved control. 6 cl, 2 dwg