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Application

97103790/06, 1997-03-12

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Start date

1997-03-12

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Actual filing date

1997-03-12

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Published

1999-10-20

(72)

Inventor

Kazbanov V.I.Olado A.G.Trofimov V.I.Rybachenko G.M.Kazbanova T.K.

(73)

Holder

Institut Khimii I Khimiko-Metallurgicheskikh Protsessov So Ran

SILICON PRODUCTION METHOD Russian patent published in 1999 - IPC

Abstract RU 2140110 C1

FIELD: silicon production. SUBSTANCE: invention relates to silicon production method distinguishing from known carbothermic ones in that cubic-structure dense silicon is prepared from materials containing other elements, aluminum, and phosphorus by affecting mixture of crystalline substances containing mainly oxygen, aluminum, and phosphorus by electromagnetic field with density at least 1011 A/sq.m. Invention can be used in creating new materials. Emission spectral analysis and mass-spectrum data support formation of silicon. EFFECT: expanded technical possibilities in high-pressure silicon production.

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RU 2 140 110 C1

Authors

Kazbanov V.I.

Olado A.G.

Trofimov V.I.

Rybachenko G.M.

Kazbanova T.K.

Dates

1999-10-20—Published

1997-03-12—Filed

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