FIELD: electrical energy generation. SUBSTANCE: method involves producing pair of electrodes, separating them with semiconductor material possessing properties of oxidizing and reducing reaction catalyst, feeding homogeneous gaseous mixture of oxidizing and reducing agents to contact area between semiconductor surface and gas-penetrable electrode, and extracting reaction products from mixture. Rectifying contact is formed between semiconductor catalyst and solid electrode. Semiconductor thickness is to be chosen bearing in mind that distance between catalytic surface and rectifying contact is not to exceed diffusion length for minor charge carriers in semiconductor material. EFFECT: improved efficiency of method. 1 dwg
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Authors
Dates
1999-10-20—Published
1998-07-22—Filed