SEMICONDUCTOR FUEL ELEMENT Russian patent published in 2000 - IPC

Abstract RU 2148878 C1

FIELD: energy conversion. SUBSTANCE: fuel element has pair of electrodes, p-type semiconductor material formed on positive electrode, and system feeding homogeneous gas mixture with oxidizing and fuel components to point of contact between semiconductor surface and negative electrode. Both electrodes are solid structures; positive electrode is fully covered with semiconductor material except for point of power lead and is surrounded on all sides by negative electrode through gap except for point of gas mixture inlet and exhaust gas outlet. EFFECT: improved efficiency of energy conversion and reduced cost. 1 dwg

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RU 2 148 878 C1

Authors

Kim S.G.

Dates

2000-05-10Published

1998-12-24Filed