FIELD: electronics. SUBSTANCE: pickup includes semiconductor substrate, layer of gallium-indium arsenide, barrier layer and layer of catalytically active metal arranged in succession. Barrier layer is produced from material which width of forbidden zone is not smaller than width of forbidden zone of gallium-indium arsenide. Thickness of barrier layer does not exceed values of diffusion length of minority carriers of gallium-indium arsenide. EFFECT: facilitated manufacture, enhanced operational stability. 3 dwg
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