AUTOMATED GAS-PHASE GROWTH UNIT Russian patent published in 1999 - IPC

FIELD: manufacture of semiconductor devices and integrated circuits. SUBSTANCE: unit has reactor with setting device, monitoring device incorporating laser beam source and two optical systems, one at reactor input and other at its output, as well as video camera with monitor, radio receiver and radio transmitter, feedback control device incorporating digital data converter, transmitter, and computer; the latter is connected to setting device. EFFECT: improved uniformity of thin-film structure growth due to optimized gas flow in reactor. 1 cl, 2 dwg