FIELD: silicon technology for producing semiconductor device structure.
SUBSTANCE: proposed method for gas-phase growth of epitaxial silicon layers involves set-up of temperature gradient in each range of substrates affording temperature of top parts of substrates lower by 10 K than that of bottom parts; growth is conducted at temperature lower by 10 - 20 K than pre-etching and annealing temperature, temperature drop-and-rise cycle by 50 - 100 K being conducted in beginning of epitaxial silicon layer growth process.
EFFECT: reduced self-doping level in growing epitaxial layers, enhanced uniformity of layer surface area and thickness, enhanced yield from each wafer, reduced computer time requirement.
1 cl, 1 dwg
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