PROCESS DETERMINING DEPTH OF POSITION OF MODIFIED SURFACE LAYER IN POLYMER FILM Russian patent published in 2000 - IPC

FIELD: photolithographic technology. SUBSTANCE: invention is related to technology of gaseous-phase chemical modification of surface layer in polymer films, specifically, in photoresist films. It can also be used in operations testing photolithographic processes and any other films transparent in visible spectrum and based on reflecting backing. Proposed process is realized by measurement of concentration-dependent parameter used to evaluate change of depth of position of layer. Refractive index of surface modified layer of polymer film illuminated with light is chosen in the capacity of concentration-dependent parameter. After it depth of position of modified layer is found by formula d_m= d(n_f-n_eff)/(n_f-n_m), where d is initial thickness of polymer film; d_m is depth of position of modified surface layer; n_f is refractive index of film after its formation; n_m is refractive index of completely modified film; n_eff is effective value of refractive index of film changing and controlled in modification process. Process is stopped when specified value d_m is achieved. EFFECT: improved quality of modification of polymer films. 1 dwg