FIELD: microelectronics.
SUBSTANCE: proposed method meant for use in submicron lithography and in particular in production of elements of submicron-size structures on semiconductor and other substrates to test material during early stage of its manufacture for its silylation ability includes measurement of variation rates of refractive indices of exposed 
and unexposed 
photoresist films, respectively, in the course of their silylation by means of automatic ellipsometer and use of their measurement results to calculate selectivity from formula 
This method provides for determining selectivity of polymeric-film near-surface silylation directly in the course of gas-phase chemical modification and for doing so at any moment, that is to test source material for silylation ability.
EFFECT: enhanced precision of silylation selectivity determination at any time moment.
1 cl, 1 dwg
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|
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