METHOD TESTING PROCESS OF EXPOSURE OF PHOTORESIST FILM Russian patent published in 2000 - IPC

FIELD: instrumentation for technological process of manufacture of microelectronic articles. SUBSTANCE: method testing process of exposure of photoresist film is realized by measurement of parameters of polarized monochromatic light reflected from semiconductor plate with photoresist film which are used to determine effective value of refractive index of exposed film in process of exposure. Change of depth of exposed layer of photoresist film is found in correspondence with this change from expression where d is thickness of starting photoresist film; d_exp is depth of exposed layer of photoresist film; n_f is refractive index of starting photoresist film; n_e.f is refractive index of photoresist film exposed completely; n_eff is effective value of refractive index of photoresist film changing in process of exposure. Process of exposure is stopped when specified value d_exp is achieved. Working length of wave of polarized light is chosen equal λ=546.1 nm. EFFECT: development of nondestructive method of accurate determination of depth of exposure of photoresist film. 2 dwg