FIELD: engineering physics. SUBSTANCE: resistive contact layer on p layer is formed on semiconductor of groups II-VI in molecular-beam epitaxy chamber; chosen as source of element of group VI is source of element Xm, where m <6; source of element Sem, where m <6; thermally split Se. Introduced in the form of free radicals such as those of group V, free radicals of group composed of B, Ad, P is p-type dope. Mentioned semiconductor layer is heated to temperature high enough to maintain growth of crystals but not lower than 250 C such as below 130-200 C. Semiconductor device of groups II-VI that may be used in laser diode has p layer of semiconductor groups II-VI one of whose sides carries resistive contact layer of p-type crystal semiconductor of groups II-V doped with surface energy layer acceptors, such as nitrogen acceptors, to ensure their pure concentration 1•1017 cm-3, or 1•1018 cm-3, or 1•1019 cm-3, and electricity conducting electrode layer characterized by Fermi energy. Resistive contact layer has sufficiently deep acceptor levels to ensure device operation at voltages across contact layer below 2 V; p later of semiconductor groups II-VI may be made of ZnSe and electrode layer may incorporate layer of material such as metal whose output work is minimum 5 V. Proposed resistive contact layer may be used, for example, to produce green-blue laser diode with wavelength of 590 to 430 nm. EFFECT: improved resistive contact layer produced by proposed method. 18 cl, 21 dwg
