FIELD: engineering physics. SUBSTANCE: laser diode has many layers of group II-IV conductors forming p-n junction; n-type semiconductor substrate may carry, for example, the following layers applied one after another: n-type buffer layer, lower n-type contact layer, lower n-type shell layer, first n-type light-conductor layer, active layer with quantum well, second p-type light-conductor layer, upper p-type shell layer, and upper p-type contact layer. Upper layer may be composite and may contain zinc and selenium or zinc, selenium, and cadmium in its composition. Laser diode emits light in spectrum region within the range of wavelengths from 430 to 590 nm. EFFECT: improved design. 10 cl, 17 dwg
