SPIN DETECTOR OF FREE ELECTRONS ON BASIS OF SEMICONDUCTOR HETEROSTRUCTURES Russian patent published in 2017 - IPC H01L31/352 

FIELD: physics.

SUBSTANCE: spin detector contains a substrate on which the barrier layer, the first layer of GaAs or Al_xGa_1-xAs, the second layer with quantum wells from In_xGa_1-xAs or GaAs, a third layer of GaAs or Al_xGa_1-xAs, the third layer with quantum wells from In_xGa_1-xAs or of GaAs, the fourth layer of GaAs or Al_xGa_1-xAs, the first quantum well layer from In_xGa_1-xAs or GaAs, a second layer of GaAs, a ferromagnetic layer, and a protective layer are sequentially formed.

EFFECT: enabling measurement of spin polarization with spatial resolution, measuring three components of spin within a single structure, increase the stability of electro-physical degradation heterostructure and optical properties, and the possibility of up to 200 degrees temperature warm-up and absence of reactivation.

13 cl, 2 dwg