FIELD: computer engineering.
SUBSTANCE: magnetic recording element comprises a set of layers, which is a magnetic recording layer, wherein set includes central layer, at least of magnetised magnetic material, magnetisation direction parallel to plane of central layer, which is located between first and second outer layers of non-magnetic material; and device for recording current passing through second external layer and a central layer in direction of current, parallel to plane of central layer and making angle α in 90°±60° with said direction of magnetisation for driving in central layer effective magnetic field, wherein said current passes either in first direction, or in second direction opposite first magnetisation direction, for orientation of magnetisation direction in first magnetisation direction or in second direction of magnetisation opposite first magnetisation direction, direction of magnetisation is oriented in response to spin-orbital field, which is generated by recording current.
EFFECT: providing recording operations without application of external magnetic field.
33 cl, 12 dwg
Title | Year | Author | Number |
---|---|---|---|
MAGNETIC MEMORY ELEMENT | 2011 |
|
RU2585578C2 |
RECORDABLE MAGNETIC ELEMENT | 2011 |
|
RU2580378C2 |
DEVICE FOR RECORDING OF INFORMATION FOR MAGNETORESISTIVE RAM | 2017 |
|
RU2677564C1 |
MAGNETOELECTRIC MEMORY | 2011 |
|
RU2573207C2 |
CMOS/SOI MRAM MEMORY INTEGRATED WITH VLSI AND METHOD FOR PRODUCTION THEREOF (VERSIONS) | 2012 |
|
RU2532589C2 |
MULTIBIT CELL WITH SYNTHETIC STORAGE LAYER | 2012 |
|
RU2573457C2 |
MAGNETIC RANDOM ACCESS MEMORY CELL WITH LOW POWER CONSUMPTION | 2012 |
|
RU2573757C2 |
MRAM CELL AND METHOD FOR WRITING TO MRAM CELL USING THERMALLY ASSISTED WRITE OPERATION WITH REDUCED FIELD CURRENT | 2013 |
|
RU2599941C2 |
RANDOM-ACCESS MAGNETIC MEMORY CELL | 2018 |
|
RU2704732C1 |
SPIN CURRENT TO CHARGE CURRENT CONVERTER BASED ON A HETEROSTRUCTURE OF TRANSITION METAL PEROVSKITES | 2021 |
|
RU2774958C1 |
Authors
Dates
2016-08-27—Published
2011-10-11—Filed