MAGNETIC MEMORY ELEMENT Russian patent published in 2016 - IPC G11C11/16 

FIELD: physics.

SUBSTANCE: group of inventions relates to a writeable magnetic element and writable magnetic device. Writable magnetic element comprises a stack of layers. Magnetic writing layer is made of at least one magnetic material having a direction of magnetisation that is parallel or perpendicular to central layer plane. Said writing layer is located between first and second outer layers made of different first and second non-magnetic materials, where second non-magnetic material is electrically conductive. Writable magnetic element also comprises a device for passing a write current only through second outer layer and magnetic writing layer, where write current flows in current direction parallel to magnetic writing layer plane and does not pass through stack of layers in a direction perpendicular to plane of layers, and a device for applying magnetic field with magnetisation direction and magnetic field perpendicular to each other.

EFFECT: inversion of magnetisation is ensured due to magnetic layer which functions without passing current perpendicularly to plane of layers.

24 cl, 25 dwg