METHOD OF FUNCTIONAL DAMAGE TO SEMICONDUCTOR RADIO ELECTRONIC FACILITIES Russian patent published in 2000 - IPC

FIELD: radio engineering, radio electronics. SUBSTANCE: method of functional damage of semiconductor radio electronic facilities includes irradiation of object with flux of high-power SHF radiation with frequency f₁, sounding of object with SHF signal which has such frequency f₀ that f₁ ≠ 2f₀, 4f₀, 6f₀, smooth rise of density of flux of SHF radiation with frequency f₁, uninterrupted recording of responses from sounding SHF signal on frequencies 2f₀, 4f₀, 6f₀ and stopping of irradiation with high-power SHF radiation if parameters of harmonic responses change. EFFECT: uninterrupted control over state of radio electronic circuits of object. 1 dwg