METHOD FOR PHASE MEMORY MATERIAL PRODUCTION Russian patent published in 2017 - IPC G11C11/00 

FIELD: physics.

SUBSTANCE: invention relates to preparation of ⋅chalcogenide semiconductor alloys used in the non-volatile phase memory devices. The method for production of the phase memory material, including grinding and mixing of the initial components selected from the following ratio: 66.7 mol. GeTe% and 33.3 mol. % Sb₂Te₃, while 0.5-3 wt % of tin (Sn) is added to the charge, then the prepared charge is placed into a quartz ampule, which is then evacuated to a residual pressure of 10^-5 mm Hg and sealed off, and then the ampule with the material is heated stepwise to a temperature of 500°C at a rate of 3-4°C per minute, kept at a temperature of 500°C for 4-6 hours, with subsequent heating to a temperature of 750°C at a rate of 1-2°C per minute, at that the ampule with the material is rotated around its axis at a rate of 1-2 rpm for 4 hours during heating. The ampule is further cooled down in a switched-off furnace, followed by annealing of the synthesized material at a temperature of 500°C for 12 hours, after which the material is used for phase memory material production. Thin films of the memory phase material are prepared by vacuum thermal evaporation of the synthesized material. During deposition of the thin films, the residual pressure in the chamber was 210^-3 mm Hg, the substrate temperature did not exceed 50°C, which allowed to obtain a thin film in an amorphous state.

EFFECT: invention provides phase memory material with increased optical contrast that improves functional characteristics of rewritable optical discs.

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