PROCESS FOR EPITAXIAL GROWTH OF SILICON CARBIDE OF 4H POLYTYPE Russian patent published in 1996 - IPC

FIELD: organic chemistry. SUBSTANCE: process for epitaxial growth of silicon carbide of 4H polytype by transsublimation of the starting material on monocrystalline silicon carbide support in the presence of vapors of agent that transforms it to 4H polytype is characterized in that the transforming agent is tin ar lead or germanium or mixture thereof. In order to reduce thickness of the transition layer, transsublimation is carried out at rate of heating the starting material at 100-1000 l/min. In order to alloy crystals, transsublimation is carried out in the presence of vapors of a volatile substance such as nitrogen, phosphorus, boron, aluminium, gallium, indium or scandium. In order to form p-n transition, transsublimation is first carried out in the presence of alloying substance such as nitrogen or phosphorus and then in the presence of aluminium or gallium, or boron, or indium. EFFECT: increased yield of the final crystals, perfection and purity thereof.