METHOD FOR PRODUCING ELECTRON-HOLE JUNCTION DOPED WITH ELEMENTS OR ISOTOPES HAVING ABNORMALLY GREAT NEUTRON ABSORPTION CROSS-SECTIONS Russian patent published in 2000 - IPC

FIELD: semiconductor engineering. SUBSTANCE: in producing p-n junctions doped with elements or stable isotopes having abnormally great absorption cross- sections for thermal neutrons (lithium, boron, and the like) diffusion driving of dope is effected by placing assembly of base metal plate and diffusion source into radiation channel of pulse or continuous nuclear reactor to initiate local heating of source and surface layer of plates to high temperatures. Intermediate operations such as pre-treatment of diffusion pair, application of SiO₂ coat onto p-n junction, and others are involved in proposed method which ensures local heating of solid diffusant-to-plate joint and protection of entire plate with p-n junction against harmful components of heated medium, as well as provides for dispensing with thermostatic control of large volumes. EFFECT: facilitated procedure, improved quality of p-n junction. 1 dwg