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2 162 256

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Application

99119396/28, 1999-09-06

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Start date

1999-09-06

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Actual filing date

1999-09-06

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Published

2001-01-20

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Inventor

Prokhorov A.M.Petrov G.N.Ljashchenko B.G.Garusov Ju.V.Shevchenko V.G.

(73)

Holder

Zakrytoe Aktsionernoe Obshchestvo

METHOD FOR REDUCING CONCENTRATION OF POST-RADIATION FLAWS IN NEUTRON-DOPED SILICON DURING ITS PULSE RADIATION TREATMENT Russian patent published in 2001 - IPC

Abstract RU 2162256 C1

FIELD: doped silicon production. SUBSTANCE: according to invention, radiation treatment is conducted in high-flux pulse reactor and not in continuous-action one; procedure is started when fluency approaches 1017 cm-2 and pulse length at mid-height ranges between one hundredth of second and hundredth fractions of characteristic time of interstitial atom exit to specimen surface; post-radiation annealing is effected under light conditions or is not made at all. EFFECT: reduced concentration of post-radiation flaws. 1 dwg

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RU 2 162 256 C1

Authors

Prokhorov A.M.

Petrov G.N.

Ljashchenko B.G.

Garusov Ju.V.

Shevchenko V.G.

Dates

2001-01-20—Published

1999-09-06—Filed

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