SEMICONDUCTOR CURRENT CHOPPER Russian patent published in 2000 - IPC

FIELD: semiconductor power devices. SUBSTANCE: current chopper designed for generating high-power and high-voltage nanosecond pulses in circuits incorporating inductive storage device and current chopper is set up of series-connected semiconductor structures each having highly doped p⁺ and n⁺ areas arranged at structure edges, slightly doped n area, and moderately doped p area both arranged inside structure to form p-n junction whose depth of occurrence in structures is 180-200 mcm. EFFECT: reduced reverse- current interruption time and increased surge factor in pulse shaping. 5 dwg, 1 tbl